BDX54E Datasheet. Specs and Replacement

Type Designator: BDX54E  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO220

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BDX54E datasheet

 9.1. Size:169K  motorola

bdx53b bdx54.pdf pdf_icon

BDX54E

Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for general purpose amplifier and low speed switching applications. BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc BDX54C VCEO(sus) = 80 ... See More ⇒

 9.2. Size:73K  st

bdx53b bdx53c bdx54b bdx54c.pdf pdf_icon

BDX54E

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t... See More ⇒

 9.3. Size:41K  fairchild semi

bdx54a.pdf pdf_icon

BDX54E

BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX54 - 45 V... See More ⇒

 9.4. Size:148K  onsemi

bdx54cg.pdf pdf_icon

BDX54E

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - ... See More ⇒

Detailed specifications: BDX54, BDX54A, BDX54AFI, BDX54B, BDX54BFI, BDX54C, BDX54CFI, BDX54D, 2SC5200, BDX54F, BDX54H, BDX54S, BDX55, BDX56, BDX57, BDX60, BDX60-4

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