All Transistors. BDX60-7 Datasheet

 

BDX60-7 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDX60-7
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO3

 BDX60-7 Transistor Equivalent Substitute - Cross-Reference Search

   

BDX60-7 Datasheet (PDF)

 9.1. Size:201K  inchange semiconductor
 bdx60.pdf

BDX60-7 BDX60-7

isc Silicon NPN Power Transistor BDX60DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V (Min)(BR)CEOHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , B772 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BUX12A

 

 
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