All Transistors. BDX61-6 Datasheet

 

BDX61-6 Datasheet and Replacement


   Type Designator: BDX61-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
 

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BDX61-6 Datasheet (PDF)

 9.1. Size:201K  inchange semiconductor
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BDX61-6

isc Silicon NPN Power Transistor BDX61DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOHigh Current CapabilityWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applications.ABSOLU

Datasheet: BDX60 , BDX60-4 , BDX60-5 , BDX60-6 , BDX60-7 , BDX61 , BDX61-4 , BDX61-5 , BC337 , BDX61-7 , BDX62 , BDX62A , BDX62B , BDX62C , BDX62L , BDX63 , BDX63A .

History: 2N2712 | 2N421A | 2N4965 | 2N5672 | 2N6718 | 2SC3216 | 2SD800

Keywords - BDX61-6 transistor datasheet

 BDX61-6 cross reference
 BDX61-6 equivalent finder
 BDX61-6 lookup
 BDX61-6 substitution
 BDX61-6 replacement

 

 
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