BDX61-6 Specs and Replacement
Type Designator: BDX61-6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO3
BDX61-6 Substitution
- BJT ⓘ Cross-Reference Search
BDX61-6 datasheet
isc Silicon NPN Power Transistor BDX61 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO High Current Capability Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. ABSOLU... See More ⇒
Detailed specifications: BDX60, BDX60-4, BDX60-5, BDX60-6, BDX60-7, BDX61, BDX61-4, BDX61-5, 2SA1943, BDX61-7, BDX62, BDX62A, BDX62B, BDX62C, BDX62L, BDX63, BDX63A
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