BDX62B Specs and Replacement
Type Designator: BDX62B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO3
BDX62B Substitution
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BDX62B datasheet
bdx62 bdx62a bdx62b bdx62c.pdf 
isc Silicon PNP Darlington Power Transistor BDX62/A/B/C DESCRIPTION Collector Current -I = -8A C High DC Current Gain-h = 1000(Min)@ I = -3A FE C Complement to Type BDX63/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RAT... See More ⇒
PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDX62 -60 BDX62A -80 VCEO Collector-Emitter Voltage V BDX62B -100 BDX62C -120 BDX62 -60 BDX62A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX62B -100 BDX62C -120 BDX62 BDX62A ... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX62/A/B/C DESCRIPTION Collector Current -IC= -8A High DC Current Gain-hFE= 1000(Min)@ IC= -3A Complement to Type BDX63/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER V... See More ⇒
Detailed specifications: BDX60-7, BDX61, BDX61-4, BDX61-5, BDX61-6, BDX61-7, BDX62, BDX62A, BD140, BDX62C, BDX62L, BDX63, BDX63A, BDX63B, BDX63C, BDX63L, BDX64
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