BDX62B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX62B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX62B Transistor Equivalent Substitute - Cross-Reference Search
BDX62B Datasheet (PDF)
bdx62 bdx62a bdx62b bdx62c.pdf
isc Silicon PNP Darlington Power Transistor BDX62/A/B/CDESCRIPTIONCollector Current -I = -8ACHigh DC Current Gain-h = 1000(Min)@ I = -3AFE CComplement to Type BDX63/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RAT
bdx62.pdf
PNP SILICON DARLINGTONS PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX62 -60 BDX62A -80 VCEO Collector-Emitter Voltage V BDX62B -100 BDX62C -120 BDX62 -60 BDX62A -80 VCEV Collector-EmitterVoltage VBE=-1.5 V V BDX62B -100 BDX62C -120 BDX62 BDX62A
bdx62 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX62/A/B/C DESCRIPTION Collector Current -IC= -8A High DC Current Gain-hFE= 1000(Min)@ IC= -3A Complement to Type BDX63/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER V
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N1978
