BDX63 Specs and Replacement
Type Designator: BDX63
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO3
BDX63 Substitution
- BJT ⓘ Cross-Reference Search
BDX63 datasheet
bdx63 bdx63a bdx63b bdx63c.pdf 
isc Silicon NPN Darlington Power Transistor BDX63/A/B/C DESCRIPTION Collector Current -I = 8A C High DC Current Gain-h = 1000(Min)@ I = 3A FE C Complement to Type BDX62/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATIN... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX63/A/B/C DESCRIPTION Collector Current -IC= 8A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDX62/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VAL... See More ⇒
Detailed specifications: BDX61-5, BDX61-6, BDX61-7, BDX62, BDX62A, BDX62B, BDX62C, BDX62L, BC557, BDX63A, BDX63B, BDX63C, BDX63L, BDX64, BDX64A, BDX64B, BDX64C
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