All Transistors. BDX63A Datasheet

 

BDX63A Datasheet and Replacement


   Type Designator: BDX63A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO3
 

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BDX63A Datasheet (PDF)

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 bdx63 bdx63a bdx63b bdx63c.pdf pdf_icon

BDX63A

isc Silicon NPN Darlington Power Transistor BDX63/A/B/CDESCRIPTIONCollector Current -I = 8ACHigh DC Current Gain-h = 1000(Min)@ I = 3AFE CComplement to Type BDX62/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATIN

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BDX63A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX63/A/B/C DESCRIPTION Collector Current -IC= 8A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDX62/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VAL

Datasheet: BDX61-6 , BDX61-7 , BDX62 , BDX62A , BDX62B , BDX62C , BDX62L , BDX63 , TIP42C , BDX63B , BDX63C , BDX63L , BDX64 , BDX64A , BDX64B , BDX64C , BDX64L .

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