BDX75 Specs and Replacement
Type Designator: BDX75
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
BDX75 Substitution
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BDX75 datasheet
isc Silicon NPN Power Transistor BDX75 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V (Min) (BR)CEO High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: BDX69A , BDX69B , BDX69C , BDX70 , BDX71 , BDX72 , BDX73 , BDX74 , A1013 , BDX77 , BDX77F , BDX78 , BDX78F , BDX83 , BDX83A , BDX83B , BDX83C .
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