BDX83B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX83B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
BDX83B Transistor Equivalent Substitute - Cross-Reference Search
BDX83B Datasheet (PDF)
bdx83 bdx83a bdx83b bdx83c.pdf
isc Silicon NPN Darlington Power Transistor BDX83/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDX83; 60V(Min)- BDX83ACEO(SUS)80V(Min)- BDX83B; 100V(Min)- BDX83CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingHammer driversSe
bdx83 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX83/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C APPLICATIONS Power switching Hammer drivers Series and shunt regulators A
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
