All Transistors. BDX83B Datasheet

 

BDX83B Datasheet and Replacement


   Type Designator: BDX83B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3
 

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BDX83B Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
 bdx83 bdx83a bdx83b bdx83c.pdf pdf_icon

BDX83B

isc Silicon NPN Darlington Power Transistor BDX83/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDX83; 60V(Min)- BDX83ACEO(SUS)80V(Min)- BDX83B; 100V(Min)- BDX83CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingHammer driversSe

 9.1. Size:214K  inchange semiconductor
 bdx83 a b c.pdf pdf_icon

BDX83B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX83/A/B/C DESCRIPTION High DC Current Gain- : hFE= 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C APPLICATIONS Power switching Hammer drivers Series and shunt regulators A

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

Keywords - BDX83B transistor datasheet

 BDX83B cross reference
 BDX83B equivalent finder
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