BDX85B Specs and Replacement
Type Designator: BDX85B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Package: TO3
BDX85B Substitution
- BJT ⓘ Cross-Reference Search
BDX85B datasheet
bdx85 bdx85a bdx85b bdx85c.pdf 
isc Silicon NPN Darlington Power Transistor BDX85/A/B/C DESCRIPTION High DC Current Gain- h = 750(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BDX85; 60V(Min)- BDX85A CEO(SUS) 80V(Min)- BDX85B; 100V(Min)- BDX85C Complement to Type BDX86/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX85/A/B/C DESCRIPTION High DC Current Gain- hFE= 750(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C Complement to Type BDX86/A/B/C APPLICATIONS Designed for use in power linear and s... See More ⇒
Detailed specifications: BDX83B , BDX83C , BDX84 , BDX84A , BDX84B , BDX84C , BDX85 , BDX85A , 2SC2240 , BDX85C , BDX86 , BDX86A , BDX86B , BDX86C , BDX87 , BDX87A , BDX87B .
History: 2SD1435
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