BDX85B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX85B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
BDX85B Transistor Equivalent Substitute - Cross-Reference Search
BDX85B Datasheet (PDF)
bdx85 bdx85a bdx85b bdx85c.pdf
isc Silicon NPN Darlington Power Transistor BDX85/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDX85; 60V(Min)- BDX85ACEO(SUS)80V(Min)- BDX85B; 100V(Min)- BDX85CComplement to Type BDX86/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign
bdx85 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX85/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= 3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C Complement to Type BDX86/A/B/C APPLICATIONS Designed for use in power linear and s
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
