BDX86C Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX86C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package: TO3
BDX86C Transistor Equivalent Substitute - Cross-Reference Search
BDX86C Datasheet (PDF)
bdx86 bdx86a bdx86b bdx86c.pdf
isc Silicon PNP Darlington Power Transistor BDX86/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -45V(Min)- BDX86; -60V(Min)- BDX86ACEO(SUS)-80V(Min)- BDX86B; -100V(Min)- BDX86CComplement to Type BDX85/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD
bdx86 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX86/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= -3A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C Complement to Type BDX85/A/B/C APPLICATIONS Designed for use in power linear
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
