All Transistors. BDX87 Datasheet

 

BDX87 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDX87
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO3

 BDX87 Transistor Equivalent Substitute - Cross-Reference Search

   

BDX87 Datasheet (PDF)

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bdx87 bdw88.pdf

BDX87
BDX87

BDX87CBDX88CCOMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The BDX87C is a silicon epitaxial-base NPNpower transistors in monolithic Darlingtonconfiguration and are mounted in Jedec TO-3metal case. They are intented for use in powerlinear and switching applications.1The complementary PNP types is the BDX88C.2TO-3INTERN

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BDX87
BDX87

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX87/A/B/C DESCRIPTION High DC Current Gain- : hFE= 750(Min)@ IC= 6A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min)- BDX87B; 100V(Min)- BDX87C Complement to Type BDX88/A/B/C APPLICATIONS Designed for use in power linear and s

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bdx87 bdx87a bdx87b bdx87c.pdf

BDX87
BDX87

isc Silicon NPN Darlington Power Transistor BDX87/A/B/CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 45V(Min)- BDX87; 60V(Min)- BDX87ACEO(SUS)80V(Min)- BDX87B; 100V(Min)- BDX87CComplement to Type BDX88/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign

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bdx87c.pdf

BDX87
BDX87

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDX87CDESCRIPTIONHigh DC Current Gain-: h = 750(Min)@ I = 6AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Complement to Type BDX88CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applic

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SB1189P

 

 
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