BDX91 Datasheet. Specs and Replacement

Type Designator: BDX91  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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BDX91 datasheet

 ..1. Size:210K  inchange semiconductor

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BDX91

isc Silicon NPN Power Transistor BDX91/93/95 DESCRIPTION Collector Current -I = 10A C Collector-Emitter Breakdown Voltage- V = 60V(Min)- BDX91 (BR)CEO 80V(Min)- BDX93 100V(Min)- BDX95 Complement to Type BDX92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and swit... See More ⇒

Detailed specifications: BDX87, BDX87A, BDX87B, BDX87C, BDX88, BDX88A, BDX88B, BDX88C, MJE350, BDX92, BDX93, BDX94, BDX95, BDX96, BDY10, BDY11, BDY12

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