All Transistors. BDX95 Datasheet

 

BDX95 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDX95
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 BDX95 Transistor Equivalent Substitute - Cross-Reference Search

   

BDX95 Datasheet (PDF)

 ..1. Size:210K  inchange semiconductor
 bdx91 bdx93 bdx95.pdf

BDX95 BDX95

isc Silicon NPN Power Transistor BDX91/93/95DESCRIPTIONCollector Current -I = 10ACCollector-Emitter Breakdown Voltage-: V = 60V(Min)- BDX91(BR)CEO80V(Min)- BDX93100V(Min)- BDX95Complement to Type BDX92/94/96Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswit

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDY90

 

 
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