All Transistors. BDX95 Datasheet

 

BDX95 Datasheet and Replacement


   Type Designator: BDX95
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BDX95 Datasheet (PDF)

 ..1. Size:210K  inchange semiconductor
 bdx91 bdx93 bdx95.pdf pdf_icon

BDX95

isc Silicon NPN Power Transistor BDX91/93/95DESCRIPTIONCollector Current -I = 10ACCollector-Emitter Breakdown Voltage-: V = 60V(Min)- BDX91(BR)CEO80V(Min)- BDX93100V(Min)- BDX95Complement to Type BDX92/94/96Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswit

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | ED1602D | DRC9143X | FJP1943OTU | KT208I | BDY12B | SFE245

Keywords - BDX95 transistor datasheet

 BDX95 cross reference
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