BDX95 Specs and Replacement
Type Designator: BDX95
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BDX95 Substitution
- BJT ⓘ Cross-Reference Search
BDX95 datasheet
isc Silicon NPN Power Transistor BDX91/93/95 DESCRIPTION Collector Current -I = 10A C Collector-Emitter Breakdown Voltage- V = 60V(Min)- BDX91 (BR)CEO 80V(Min)- BDX93 100V(Min)- BDX95 Complement to Type BDX92/94/96 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and swit... See More ⇒
Detailed specifications: BDX88 , BDX88A , BDX88B , BDX88C , BDX91 , BDX92 , BDX93 , BDX94 , B647 , BDX96 , BDY10 , BDY11 , BDY12 , BDY12-10 , BDY12-16 , BDY12-6 , BDY12B .
History: BDX87C | 2SA1320 | BDY12 | BDY58 | 2N566 | BDY87 | BDY12-16
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