All Transistors. BDY13-10 Datasheet

 

BDY13-10 Datasheet and Replacement


   Type Designator: BDY13-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 26 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO3
 

 BDY13-10 Substitution

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BDY13-10 Datasheet (PDF)

 8.1. Size:207K  inchange semiconductor
 bdy13-6.pdf pdf_icon

BDY13-10

isc Silicon NPN Power Transistor BDY13-6DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1V(Max)@ I = 3ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RATI

Datasheet: BDY12 , BDY12-10 , BDY12-16 , BDY12-6 , BDY12B , BDY12C , BDY12D , BDY13 , AC125 , BDY13-16 , BDY13-6 , BDY13B , BDY13C , BDY13D , BDY15 , BDY15A , BDY15B .

History: KTA1225D | MRF1090MB | GES6004 | NR461FS

Keywords - BDY13-10 transistor datasheet

 BDY13-10 cross reference
 BDY13-10 equivalent finder
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