All Transistors. BDY13-6 Datasheet

 

BDY13-6 Datasheet and Replacement


   Type Designator: BDY13-6
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 26 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

 BDY13-6 Substitution

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BDY13-6 Datasheet (PDF)

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BDY13-6

isc Silicon NPN Power Transistor BDY13-6DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1V(Max)@ I = 3ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RATI

Datasheet: BDY12-16 , BDY12-6 , BDY12B , BDY12C , BDY12D , BDY13 , BDY13-10 , BDY13-16 , 2N2222 , BDY13B , BDY13C , BDY13D , BDY15 , BDY15A , BDY15B , BDY15C , BDY16 .

History: MJE15032G

Keywords - BDY13-6 transistor datasheet

 BDY13-6 cross reference
 BDY13-6 equivalent finder
 BDY13-6 lookup
 BDY13-6 substitution
 BDY13-6 replacement

 

 
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