BDY13-6 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY13-6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 26 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
BDY13-6 Transistor Equivalent Substitute - Cross-Reference Search
BDY13-6 Datasheet (PDF)
..1. Size:207K inchange semiconductor
bdy13-6.pdf
bdy13-6.pdf
isc Silicon NPN Power Transistor BDY13-6DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V )= 1V(Max)@ I = 3ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF signal powe amplifier applications.ABSOLUTE MAXIMUM RATI
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
