BDY20 Datasheet and Replacement
Type Designator: BDY20
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BDY20 Substitution
BDY20 Datasheet (PDF)
bdy20.pdf

BDY20Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
bdy20.pdf

isc Silicon NPN Power Transistor BDY20DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RAT
Datasheet: BDY15B , BDY15C , BDY16 , BDY16A , BDY16B , BDY17 , BDY18 , BDY19 , A1941 , BDY21 , BDY21-10 , BDY21-16 , BDY21-6 , BDY22 , BDY22-10 , BDY22-6 , BDY23 .
History: BCP56-16T3 | MP5141 | GES4400 | OC470 | TSB145 | BCX76 | 2SC1981S
Keywords - BDY20 transistor datasheet
BDY20 cross reference
BDY20 equivalent finder
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BDY20 replacement
History: BCP56-16T3 | MP5141 | GES4400 | OC470 | TSB145 | BCX76 | 2SC1981S



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