BDY20 Specs and Replacement
Type Designator: BDY20
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BDY20 Substitution
- BJT ⓘ Cross-Reference Search
BDY20 datasheet
BDY20 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
isc Silicon NPN Power Transistor BDY20 DESCRIPTION Excellent Safe Operating Area DC Current Gain -h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RAT... See More ⇒
Detailed specifications: BDY15B , BDY15C , BDY16 , BDY16A , BDY16B , BDY17 , BDY18 , BDY19 , D882 , BDY21 , BDY21-10 , BDY21-16 , BDY21-6 , BDY22 , BDY22-10 , BDY22-6 , BDY23 .
History: 2SC1262S
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