BDY38 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY38
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 115 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BDY38 Transistor Equivalent Substitute - Cross-Reference Search
BDY38 Datasheet (PDF)
..1. Size:202K inchange semiconductor
bdy38.pdf
bdy38.pdf
isc Silicon NPN Power Transistor BDY38DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V (Min)(BR)CEOWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Datasheet: BDY28 , BDY28A , BDY28B , BDY28C , BDY29 , BDY34 , BDY37 , BDY37A , D965 , BDY39 , BDY39-4 , BDY39-6 , BDY42 , BDY43 , BDY44 , BDY45 , BDY46 .
