BDY53 Specs and Replacement
Type Designator: BDY53
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BDY53 Substitution
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BDY53 datasheet
. BDY53 BDY54 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY53 60 VCEO Collector-Emitter Voltage V BDY54 120 BDY53 100 VCBO Collector-Base Voltage V BDY54 180 BDY53 VEBO Emitter-Base Voltage 7V BDY54 BDY53 IC Collector Current 12 A BDY54 BDY53 IB Base Current 5 ... See More ⇒
isc Silicon NPN Power Transistor BDY53 DESCRIPTION Collector-Emitter Sustaining Voltage- V =60V(Min.) CEO(SUS) Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSO... See More ⇒
. BDY53 BDY54 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY53 60 Collector-Emitter Voltage VCEO V BDY54 120 BDY53 100 VCBO Collector-Base Voltage V BDY54 180 BDY53 VEBO Emitter-Base Voltage 7V BDY54 BDY53 IC Collector Current 12 A BDY54 BDY53 IB Base Current 5... See More ⇒
Detailed specifications: BDY45, BDY46, BDY47, BDY48, BDY48-200, BDY48-300, BDY48-400, BDY49, 2SD669A, BDY54, BDY55, BDY56, BDY57, BDY57A, BDY58, BDY58R, BDY60
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History: 2SC1466 | BLD133DL | 2N3998SMD05 | S9015 | 2SC146A | 2SD1118
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