BDY54 Datasheet and Replacement
Type Designator: BDY54
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
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BDY54 Datasheet (PDF)
bdy53 bdy54.pdf

.BDY53 BDY54NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY53 60VCEO Collector-Emitter Voltage VBDY54 120BDY53 100VCBO Collector-Base Voltage VBDY54 180BDY53VEBO Emitter-Base Voltage 7VBDY54BDY53IC Collector Current 12 ABDY54BDY53IB Base Current 5
bdy54.pdf

isc Silicon NPN Power Transistor BDY54DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsAB
bdy53-bdy54.pdf

.BDY53 BDY54NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY53 60Collector-Emitter VoltageVCEO VBDY54 120BDY53 100VCBO Collector-Base Voltage VBDY54 180BDY53VEBO Emitter-Base Voltage 7VBDY54BDY53IC Collector Current 12 ABDY54BDY53IB Base Current 5
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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