BDY54 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDY54
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
BDY54 Datasheet (PDF)
bdy53 bdy54.pdf

.BDY53 BDY54NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY53 60VCEO Collector-Emitter Voltage VBDY54 120BDY53 100VCBO Collector-Base Voltage VBDY54 180BDY53VEBO Emitter-Base Voltage 7VBDY54BDY53IC Collector Current 12 ABDY54BDY53IB Base Current 5
bdy54.pdf

isc Silicon NPN Power Transistor BDY54DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsAB
bdy53-bdy54.pdf

.BDY53 BDY54NPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY53 60Collector-Emitter VoltageVCEO VBDY54 120BDY53 100VCBO Collector-Base Voltage VBDY54 180BDY53VEBO Emitter-Base Voltage 7VBDY54BDY53IC Collector Current 12 ABDY54BDY53IB Base Current 5
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .



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