BDY60 Specs and Replacement
Type Designator: BDY60
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO3
BDY60 Substitution
- BJT ⓘ Cross-Reference Search
BDY60 datasheet
isc Silicon NPN Power Transistor BDY60 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
BDY60/02 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒
Detailed specifications: BDY53, BDY54, BDY55, BDY56, BDY57, BDY57A, BDY58, BDY58R, 2SC2383, BDY60A, BDY60B, BDY61, BDY62, BDY63, BDY64, BDY65, BDY66
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