All Transistors. BDY60A Datasheet

 

BDY60A Datasheet and Replacement


   Type Designator: BDY60A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: TO3
 

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BDY60A Datasheet (PDF)

 9.1. Size:11K  semelab
 bdy60-02.pdf pdf_icon

BDY60A

BDY60/02Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.2. Size:201K  inchange semiconductor
 bdy60.pdf pdf_icon

BDY60A

isc Silicon NPN Power Transistor BDY60DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Datasheet: BDY54 , BDY55 , BDY56 , BDY57 , BDY57A , BDY58 , BDY58R , BDY60 , D667 , BDY60B , BDY61 , BDY62 , BDY63 , BDY64 , BDY65 , BDY66 , BDY67 .

History: KT312V | CSC2001MAI | BC510B | BU107 | RT3C77M | 2SC5343EF | CSD1133B

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