BDY61 Specs and Replacement
Type Designator: BDY61
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO3
BDY61 Substitution
- BJT ⓘ Cross-Reference Search
BDY61 datasheet
isc Silicon NPN Power Transistor BDY61 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
Detailed specifications: BDY56, BDY57, BDY57A, BDY58, BDY58R, BDY60, BDY60A, BDY60B, 2N2907, BDY62, BDY63, BDY64, BDY65, BDY66, BDY67, BDY68, BDY69
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