BDY72 Specs and Replacement
Type Designator: BDY72
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO66
BDY72 Substitution
- BJT ⓘ Cross-Reference Search
BDY72 datasheet
isc Silicon NPN Power Transistor BDY72 DESCRIPTION Contunuous Collector Current-I = 3A C Collector Power Dissipation- P = 25W @T = 25 C C Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose switching and linear amplifier applic... See More ⇒
Detailed specifications: BDY64 , BDY65 , BDY66 , BDY67 , BDY68 , BDY69 , BDY70 , BDY71 , A42 , BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 , BDY80 .
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