BDY72 Datasheet and Replacement
Type Designator: BDY72
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO66
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BDY72 Datasheet (PDF)
bdy72.pdf

isc Silicon NPN Power Transistor BDY72DESCRIPTIONContunuous Collector Current-I = 3ACCollector Power Dissipation-: P = 25W @T = 25C CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose switching and linearamplifier applic
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1711S | 2N1713 | BDY69
Keywords - BDY72 transistor datasheet
BDY72 cross reference
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History: 2N1711S | 2N1713 | BDY69



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