BDY73 Specs and Replacement
Type Designator: BDY73
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO3
BDY73 Substitution
- BJT ⓘ Cross-Reference Search
BDY73 datasheet
isc Silicon NPN Power Transistor BDY73 DESCRIPTION Excellent Safe Operating Area DC Current Gain-h =50-150@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RAT... See More ⇒
Detailed specifications: BDY65 , BDY66 , BDY67 , BDY68 , BDY69 , BDY70 , BDY71 , BDY72 , D667 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 , BDY80 , BDY80A .
History: BDY87 | BDY58 | 2SA1326 | BDY24C | 2SA1320 | BC860CLT1
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