BDY73 Datasheet and Replacement
Type Designator: BDY73
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
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BDY73 Datasheet (PDF)
bdy73.pdf

isc Silicon NPN Power Transistor BDY73DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =50-150@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RAT
Datasheet: BDY65 , BDY66 , BDY67 , BDY68 , BDY69 , BDY70 , BDY71 , BDY72 , 2222A , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 , BDY80 , BDY80A .
Keywords - BDY73 transistor datasheet
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History: 2N1711L | BDY79



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