All Transistors. BDY75 Datasheet

 

BDY75 Datasheet and Replacement


   Type Designator: BDY75
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

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BDY75 Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
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BDY75

isc Silicon NPN Power Transistor BDY75DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power ,high current andswitching applications.ABSOLUTE MAXIMUM RATING

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SD743A | 2N6328 | 2N4898 | H3200 | 2N5335 | SL5304DCP | 2N414

Keywords - BDY75 transistor datasheet

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