BDY75 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY75
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
BDY75 Transistor Equivalent Substitute - Cross-Reference Search
BDY75 Datasheet (PDF)
..1. Size:205K inchange semiconductor
bdy75.pdf
bdy75.pdf
isc Silicon NPN Power Transistor BDY75DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power ,high current andswitching applications.ABSOLUTE MAXIMUM RATING
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
