BDY75 Specs and Replacement
Type Designator: BDY75
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
BDY75 Substitution
- BJT ⓘ Cross-Reference Search
BDY75 datasheet
isc Silicon NPN Power Transistor BDY75 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power ,high current and switching applications. ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: BDY67 , BDY68 , BDY69 , BDY70 , BDY71 , BDY72 , BDY73 , BDY74 , BDT88 , BDY76 , BDY77 , BDY78 , BDY79 , BDY80 , BDY80A , BDY80B , BDY80C .
Keywords - BDY75 pdf specs
BDY75 cross reference
BDY75 equivalent finder
BDY75 pdf lookup
BDY75 substitution
BDY75 replacement
