All Transistors. BDY75 Datasheet

 

BDY75 Datasheet and Replacement


   Type Designator: BDY75
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

 BDY75 Substitution

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BDY75 Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
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BDY75

isc Silicon NPN Power Transistor BDY75DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power ,high current andswitching applications.ABSOLUTE MAXIMUM RATING

Datasheet: BDY67 , BDY68 , BDY69 , BDY70 , BDY71 , BDY72 , BDY73 , BDY74 , BC547 , BDY76 , BDY77 , BDY78 , BDY79 , BDY80 , BDY80A , BDY80B , BDY80C .

History: 2SD743A | 2N2351A | HSB649T | XC101 | 2N2336 | 2SB989 | 2N194A

Keywords - BDY75 transistor datasheet

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