All Transistors. BDY77 Datasheet

 

BDY77 Datasheet and Replacement


   Type Designator: BDY77
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
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BDY77 Datasheet (PDF)

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BDY77

isc Silicon NPN Power Transistor BDY77DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOLow Collector-Emitter Saturation VoltageExcellent Safe Operating AreaMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positioners, linearamplifiers, switching regulators,so

Datasheet: BDY69 , BDY70 , BDY71 , BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BD139 , BDY78 , BDY79 , BDY80 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A .

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