BDY77 Specs and Replacement
Type Designator: BDY77
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO3
BDY77 Substitution
- BJT ⓘ Cross-Reference Search
BDY77 datasheet
isc Silicon NPN Power Transistor BDY77 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,so... See More ⇒
Detailed specifications: BDY69 , BDY70 , BDY71 , BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BC547 , BDY78 , BDY79 , BDY80 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A .
History: 2SC1262S | BDX85A | BDY18 | 2SA1327Y | BDY92 | 2SA1272 | BDY15A
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