BDY79 Specs and Replacement
Type Designator: BDY79
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO66
BDY79 Substitution
- BJT ⓘ Cross-Reference Search
BDY79 datasheet
isc Silicon NPN Power Transistor BDY79 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 25W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒
Detailed specifications: BDY71 , BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , TIP41C , BDY80 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A , BDY81B , BDY81C .
History: S9012L | 2SC1263F | BC485-5
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