BDY79 Datasheet and Replacement
Type Designator: BDY79
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO66
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BDY79 Datasheet (PDF)
bdy79.pdf

isc Silicon NPN Power Transistor BDY79DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 25W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
Datasheet: BDY71 , BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , C945 , BDY80 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A , BDY81B , BDY81C .
History: 2N1711L
Keywords - BDY79 transistor datasheet
BDY79 cross reference
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History: 2N1711L



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