BDY80 Specs and Replacement
Type Designator: BDY80
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
BDY80 Substitution
- BJT ⓘ Cross-Reference Search
BDY80 datasheet
isc Silicon NPN Power Transistor BDY80 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 36W @T = 25 C C Complement to Type BDY82 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 , BD139 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A , BDY81B , BDY81C , BDY82 .
History: S9012L | 2SC2290A | BDX88 | BC485-5 | 2SC1264 | 2SC1263F
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