BDY80 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY80
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.8 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
BDY80 Transistor Equivalent Substitute - Cross-Reference Search
BDY80 Datasheet (PDF)
..1. Size:217K inchange semiconductor
bdy80.pdf
bdy80.pdf
isc Silicon NPN Power Transistor BDY80DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY82Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N3298
