All Transistors. BDY80B Datasheet

 

BDY80B Datasheet and Replacement


   Type Designator: BDY80B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220
 

 BDY80B Substitution

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BDY80B Datasheet (PDF)

 9.1. Size:217K  inchange semiconductor
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BDY80B

isc Silicon NPN Power Transistor BDY80DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY82Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 , BDY80 , BDY80A , C1815 , BDY80C , BDY81 , BDY81A , BDY81B , BDY81C , BDY82 , BDY82A , BDY82B .

History: NS3763 | KTC3571S | K2501 | 2SC4852 | NPS3566 | 2SC4953 | 2N980

Keywords - BDY80B transistor datasheet

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