BDY82C pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDY82C Specs and Replacement

Type Designator: BDY82C

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO220

BDY82C Substitution

- BJT ⓘ Cross-Reference Search

BDY82C datasheet

9.1. Size:220K inchange semiconductor

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isc Silicon PNP Power Transistor BDY82 DESCRIPTION Continuous Collector Current-I = -4A C Collector Power Dissipation- P = 36W @T = 25 C C Complement to Type BDY80 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

Detailed specifications: BDY80C , BDY81 , BDY81A , BDY81B , BDY81C , BDY82 , BDY82A , BDY82B , BC337 , BDY83 , BDY83A , BDY83B , BDY83C , BDY87 , BDY88 , BDY89 , BDY90 .