BDY95 Specs and Replacement
Type Designator: BDY95
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BDY95 Substitution
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BDY95 datasheet
isc Silicon NPN Power Transistors BDY95 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
Detailed specifications: BDY90 , BDY90A , BDY91 , BDY92 , BDY93 , BDY93-01 , BDY94 , BDY94-01 , 2SD718 , BDY96 , BDY96-01 , BDY97 , BDY97-01 , BDY98 , BDY99 , BEL100N , BEL100P .
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