All Transistors. BDY95 Datasheet

 

BDY95 Datasheet and Replacement


   Type Designator: BDY95
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
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BDY95 Datasheet (PDF)

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BDY95

isc Silicon NPN Power Transistors BDY95DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as high-speed power switch at highvoltage.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

Datasheet: BDY90 , BDY90A , BDY91 , BDY92 , BDY93 , BDY93-01 , BDY94 , BDY94-01 , A733 , BDY96 , BDY96-01 , BDY97 , BDY97-01 , BDY98 , BDY99 , BEL100N , BEL100P .

History: KT8107D2 | TR8040 | 2SC42A | UN9217R | 2N1056 | 2SC999A | ECG2306

Keywords - BDY95 transistor datasheet

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