BF324 Datasheet, Equivalent, Cross Reference Search
Type Designator: BF324
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): O.1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO92
BF324 Transistor Equivalent Substitute - Cross-Reference Search
BF324 Datasheet (PDF)
bf324.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BF324PNP medium frequency transistor1997 Jul 07Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP medium frequency transistor BF324FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 30 V).1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .