BF324 Datasheet. Specs and Replacement

Type Designator: BF324  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): O.1 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO92

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BF324 datasheet

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BF324

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF324 PNP medium frequency transistor 1997 Jul 07 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP medium frequency transistor BF324 FEATURES PINNING Low current (max. 25 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1 ... See More ⇒

Detailed specifications: BF322-2, BF322-3, BF322-4, BF323, BF323-1, BF323-2, BF323-3, BF323-4, 8050, BF325, BF329, BF330, BF332, BF332B, BF333, BF333C, BF333D

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