BF419 Datasheet, Equivalent, Cross Reference Search
Type Designator: BF419
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 6 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO126
BF419 Transistor Equivalent Substitute - Cross-Reference Search
BF419 Datasheet (PDF)
..1. Size:50K philips
bf419.pdf
bf419.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BF419NPN high-voltage transistor1997 Apr 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistor BF419FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 250 V).1 emitt
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
