BF419 Datasheet. Specs and Replacement
Type Designator: BF419 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 6 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO126
BF419 Substitution
- BJT ⓘ Cross-Reference Search
BF419 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF419 NPN high-voltage transistor 1997 Apr 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistor BF419 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 250 V). 1 emitt... See More ⇒
Detailed specifications: BF413, BF414, BF415, BF416, BF417, BF417G, BF418, BF418G, 2SC2240, BF420, BF420A, BF420L, BF420P, BF420P3, BF420S, BF421, BF421A
Keywords - BF419 pdf specs
BF419 cross reference
BF419 equivalent finder
BF419 pdf lookup
BF419 substitution
BF419 replacement
