BF509S PDF and Equivalents Search

 

BF509S Specs and Replacement

   Type Designator: BF509S
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 0.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO92
     - BJT ⓘ Cross-Reference Search