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BF536 Specs and Replacement

   Type Designator: BF536
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings

   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO92
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