BF550
Datasheet, Equivalent, Cross Reference Search
Type Designator: BF550
SMD Transistor Code: G2_LA_LAp_LAs_LAt_LAW
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 40
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 0.025
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 0.3
pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package:
SOT23
BF550
Transistor Equivalent Substitute - Cross-Reference Search
BF550
Datasheet (PDF)
..1. Size:94K philips
bf550.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF550PNP medium frequency transistorProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetPNP medium frequency transistor BF550FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Medium frequency applications
..2. Size:46K philips
bf550 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BF550PNP medium frequency transistor1999 Apr 15Product specificationSupersedes data of 1997 Jul 07Philips Semiconductors Product specificationPNP medium frequency transistor BF550FEATURES PINNING Low current (max. 25 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector
..3. Size:268K nxp
bf550.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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