BF585 Datasheet. Specs and Replacement
Type Designator: BF585 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO202
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BF585 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors 1999 Apr 21 Product specification Supersedes data of 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in video output stages of black and white a... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF583; BF585; BF587 NPN high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF583; BF585; BF587 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in v... See More ⇒
Detailed specifications: BF562, BF568, BF569, BF569R, BF570, BF579, BF579R, BF583, S8550, BF587, BF591, BF593, BF594, BF595, BF595S, BF596, BF597
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