BF585 Datasheet, Equivalent, Cross Reference Search
Type Designator: BF585
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO202
BF585 Transistor Equivalent Substitute - Cross-Reference Search
BF585 Datasheet (PDF)
bf585 bf587.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D067BF585; BF587NPN high-voltage transistors1999 Apr 21Product specificationSupersedes data of 1996 Dec 09Philips Semiconductors Product specificationNPN high-voltage transistors BF585; BF587FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS For use in video output stages of black and white a
bf583 bf585 bf587.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF583; BF585; BF587NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF583; BF585; BF587FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS For use in v
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
