BF858A Datasheet, Equivalent, Cross Reference Search
Type Designator: BF858A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.8 W
Maximum Collector-Base Voltage |Vcb|: 270 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO202
BF858A Transistor Equivalent Substitute - Cross-Reference Search
BF858A Datasheet (PDF)
bf857 bf858 bf859.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF857; BF858; BF859NPN high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors BF857; BF858; BF859DESCRIPTIONNPN transistors in a TO-202 plastic package.handbook, halfpageAn A-version
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .