BFG16A Specs and Replacement

Type Designator: BFG16A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1500 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: SOT223

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BFG16A datasheet

 ..1. Size:53K  philips

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BFG16A

DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor 1995 Sep 12 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A FEATURES PINNING fpage 4 High power gain PIN DESCRIPTION Good thermal stability 1 emitter Gold metallizat... See More ⇒

Detailed specifications: BFE193, BFE196, BFE214, BFE215, BFF576, BFF576TO5, BFG134, BFG135, NJW0281G, BFG17, BFG17A, BFG193, BFG194, BFG195, BFG196, BFG197, BFG197X

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