All Transistors. BFG17 Datasheet

 

BFG17 Datasheet and Replacement


   Type Designator: BFG17
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2800 MHz
   Collector Capacitance (Cc): 0.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SOT143
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BFG17 Datasheet (PDF)

 ..1. Size:60K  philips
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BFG17

DISCRETE SEMICONDUCTORSDATA SHEETBFG17ANPN 3 GHz wideband transistor1995 Sep 12Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 3 GHz wideband transistor BFG17ADESCRIPTION PINNINGNPN wideband transistor in aPIN DESCRIPTIONmicrominiature plastic SOT143handbook, 2 columns43Code: E6surface mounting envelop

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DMC26104 | GET2907 | AU210 | KTD2854 | MMS8550 | 2SA2153-TD-E | UN9110S

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