BFG17 Specs and Replacement

Type Designator: BFG17

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2800 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SOT143

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BFG17 datasheet

 ..1. Size:60K  philips

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BFG17

DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor 1995 Sep 12 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A DESCRIPTION PINNING NPN wideband transistor in a PIN DESCRIPTION microminiature plastic SOT143 handbook, 2 columns 43 Code E6 surface mounting envelop... See More ⇒

Detailed specifications: BFE196, BFE214, BFE215, BFF576, BFF576TO5, BFG134, BFG135, BFG16A, D965, BFG17A, BFG193, BFG194, BFG195, BFG196, BFG197, BFG197X, BFG198

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