BFG17 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG17
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2800 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT143
BFG17 Transistor Equivalent Substitute - Cross-Reference Search
BFG17 Datasheet (PDF)
..1. Size:60K philips
bfg17.pdf
bfg17.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG17ANPN 3 GHz wideband transistor1995 Sep 12Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 3 GHz wideband transistor BFG17ADESCRIPTION PINNINGNPN wideband transistor in aPIN DESCRIPTIONmicrominiature plastic SOT143handbook, 2 columns43Code: E6surface mounting envelop
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
