BFG235 Specs and Replacement
Type Designator: BFG235
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5900 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT223
BFG235 Substitution
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BFG235 datasheet
BFG 235 NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Order... See More ⇒
Detailed specifications: BFG194, BFG195, BFG196, BFG197, BFG197X, BFG198, BFG19S, BFG23, TIP142, BFG25AX, BFG32, BFG33, BFG33X, BFG34, BFG35, BFG51, BFG54
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