BFG235 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG235
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5900 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT223
BFG235 Transistor Equivalent Substitute - Cross-Reference Search
BFG235 Datasheet (PDF)
..1. Size:48K siemens
bfg235.pdf
bfg235.pdf
BFG 235NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Order
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BUD98
