All Transistors. BFG235 Datasheet

 

BFG235 Datasheet and Replacement


   Type Designator: BFG235
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5900 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT223
 

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BFG235 Datasheet (PDF)

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BFG235

BFG 235NPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 5.5 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Order

Datasheet: BFG194 , BFG195 , BFG196 , BFG197 , BFG197X , BFG198 , BFG19S , BFG23 , A1266 , BFG25AX , BFG32 , BFG33 , BFG33X , BFG34 , BFG35 , BFG51 , BFG54 .

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