BFG97 Specs and Replacement
Type Designator: BFG97
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5500 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO251
BFG97 Substitution
- BJT ⓘ Cross-Reference Search
BFG97 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DESCRIPTION PINNING age 4 NPN planar epitaxial transistor PIN DESCRIPTION mounted in a plastic SOT223 1 emitter envelope. 2 base It features excellent output voltage capabilities, and is pr... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DESCRIPTION PINNING age 4 NPN planar epitaxial transistor PIN DESCRIPTION mounted in a plastic SOT223 1 emitter envelope. 2 base It features excelle... See More ⇒
Detailed specifications: BFG90A, BFG91A, BFG92A, BFG92AX, BFG93A, BFG93AX, BFG94, BFG96, 2N3904, BFJ17, BFJ18, BFJ19, BFJ21, BFJ22, BFJ45, BFJ46, BFJ47
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