BFG97 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG97
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5500 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO251
BFG97 Transistor Equivalent Substitute - Cross-Reference Search
BFG97 Datasheet (PDF)
bfg97 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG97NPN 5 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 5 GHz wideband transistor BFG97DESCRIPTION PINNINGage4NPN planar epitaxial transistor PIN DESCRIPTIONmounted in a plastic SOT223 1 emitterenvelope.2 baseIt features excellent output voltage capabilities, and is pr
bfg97.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG97NPN 5 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFG97DESCRIPTION PINNINGage4NPN planar epitaxial transistorPIN DESCRIPTIONmounted in a plastic SOT2231 emitterenvelope.2 baseIt features excelle
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
