2N3020S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3020S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 180 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N3020S Transistor Equivalent Substitute - Cross-Reference Search
2N3020S Datasheet (PDF)
8.1. Size:60K central
2n3019 2n3020.pdf
2n3019 2n3020.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
8.2. Size:75K cdil
2n3019 2n3020.pdf
2n3019 2n3020.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020TO-39Metal Can PackageGeneral TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 80 VCollector Base Voltage VCBO 140 VEmitter Base Voltage VEBO 7.0 VCollector Current Continuous IC 1.0 APower Diss
Datasheet: 2N3019S , 2N3019UB , 2N301A , 2N301B , 2N301G , 2N301W , 2N302 , 2N3020 , BC327 , 2N3021 , 2N3022 , 2N3023 , 2N3024 , 2N3025 , 2N3026 , 2N303 , 2N3033 .
