BFP13 Specs and Replacement

Type Designator: BFP13

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

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BFP13 datasheet

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BFP13

BFP 136W NPN Silicon RF Transistor For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 136W PAs Q62702-F1575 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emi... See More ⇒

Detailed specifications: BFN27, BFN36, BFN37, BFN38, BFN39, BFP10, BFP11, BFP12, 8550, BFP14, BFP17, BFP180, BFP181, BFP181T, BFP182, BFP182T, BFP183

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