All Transistors. BFP520V Datasheet

 

BFP520V Datasheet and Replacement


   Type Designator: BFP520V
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -

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BFP520V Datasheet (PDF)

 8.1. Size:48K  siemens
 bfp520.pdf pdf_icon

BFP520V

SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz... See More ⇒

 8.2. Size:224K  infineon
 bfp520f.pdf pdf_icon

BFP520V

BFP520F Low profile high gain silicon NPN RF bipolar transistor Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz. It remains cost competitiv... See More ⇒

Datasheet: BFP35A , BFP519 , BFP519II , BFP519III , BFP519V , BFP519VI , BFP520 , BFP520II , 2N2907 , BFP520VI , BFP521 , BFP521I , BFP521II , BFP521III , BFP521IV , BFP521V , BFP619 .

History: MRF653S | MUN2230LT1 | T1892 | UN9215R | D42C3 | L2SA1576ART1G | L2SC5635LT1G

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