BFP520VI Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP520VI
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
BFP520VI Transistor Equivalent Substitute - Cross-Reference Search
BFP520VI Datasheet (PDF)
bfp520.pdf
SIEGET 45BFP 520NPN Silicon RF TransistorPreliminary data3 For highest gain low noise amplifier4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz
bfp520f.pdf
BFP520FLow profile high gain silicon NPN RF bipolar transistorProduct descriptionThe BFP520F is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fifth generation RF bipolar transistor family. Its transitionfrequency fT of 45 GHz, high gain and low noise make the device suitable for applicationsup to 15 GHz. It remains cost competitiv
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
