BFQ17 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ17
SMD Transistor Code: FA_FD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT89
BFQ17 Transistor Equivalent Substitute - Cross-Reference Search
BFQ17 Datasheet (PDF)
..1. Size:31K philips
bfq17 cnv 2.pdf
bfq17 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ17NPN 1 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 1 GHz wideband transistor BFQ17DESCRIPTION PINNINGNPN transistor in a SOT89 plasticPIN DESCRIPTIONenvelope intended for application inCode: FAthick and thin-film circuits. Thep
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
