BFQ17 Specs and Replacement
Type Designator: BFQ17
SMD Transistor Code: FA_FD
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SOT89
BFQ17 Substitution
- BJT ⓘ Cross-Reference Search
BFQ17 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFQ17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFQ17 DESCRIPTION PINNING NPN transistor in a SOT89 plastic PIN DESCRIPTION envelope intended for application in Code FA thick and thin-film circuits. The p... See More ⇒
Detailed specifications: BFP96, BFQ134, BFQ135, BFQ136, BFQ149, BFQ161, BFQ162, BFQ163, TIP122, BFQ17P, BFQ18, BFQ181, BFQ182, BFQ18A, BFQ19, BFQ193, BFQ194
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