BFQ32S Specs and Replacement

Type Designator: BFQ32S

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4500 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO50

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BFQ32S datasheet

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Detailed specifications: BFQ30, BFQ31, BFQ31A, BFQ31AR, BFQ31R, BFQ32, BFQ32C, BFQ32M, D965, BFQ33, BFQ33C, BFQ34, BFQ34T, BFQ35, BFQ36, BFQ37, BFQ38

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