BFQ34 Specs and Replacement

Type Designator: BFQ34

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3700 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO50

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BFQ34 datasheet

 ..1. Size:60K  philips

 bfq34 cnv 2.pdf pdf_icon

BFQ34

DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 DESCRIPTION PINNING NPN transistor encapsulated in a 4 PIN DESCRIPTION lead SOT122A envelope with a Code BFQ34/01 ceramic cap. All leads are isolated ... See More ⇒

Detailed specifications: BFQ31AR, BFQ31R, BFQ32, BFQ32C, BFQ32M, BFQ32S, BFQ33, BFQ33C, BC549, BFQ34T, BFQ35, BFQ36, BFQ37, BFQ38, BFQ38S, BFQ39, BFQ40

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