BFQ34 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ34
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3700 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO50
BFQ34 Transistor Equivalent Substitute - Cross-Reference Search
BFQ34 Datasheet (PDF)
..1. Size:60K philips
bfq34 cnv 2.pdf
bfq34 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ34NPN 4 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFQ34DESCRIPTION PINNINGNPN transistor encapsulated in a 4PIN DESCRIPTIONlead SOT122A envelope with aCode: BFQ34/01ceramic cap. All leads are isolated
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
