All Transistors. BFQ34 Datasheet

 

BFQ34 Datasheet and Replacement


   Type Designator: BFQ34
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3700 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO50
 

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BFQ34 Datasheet (PDF)

 ..1. Size:60K  philips
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BFQ34

DISCRETE SEMICONDUCTORSDATA SHEETBFQ34NPN 4 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFQ34DESCRIPTION PINNINGNPN transistor encapsulated in a 4PIN DESCRIPTIONlead SOT122A envelope with aCode: BFQ34/01ceramic cap. All leads are isolated

Datasheet: BFQ31AR , BFQ31R , BFQ32 , BFQ32C , BFQ32M , BFQ32S , BFQ33 , BFQ33C , 2222A , BFQ34T , BFQ35 , BFQ36 , BFQ37 , BFQ38 , BFQ38S , BFQ39 , BFQ40 .

History: FHTL8050M-ME | 3DD9E | KRA320E | BD533 | D45D2

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